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onsemi
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NTMSD6N303R2

Manufacturer Part Number:
NTMSD6N303R2
Manufacturer / Brand
onsemi
Part of Description:
MOSFET N-CH 30V 6A 8SOIC
Datasheets:
NTMSD6N303R2(1).pdfNTMSD6N303R2(2).pdfNTMSD6N303R2(3).pdfNTMSD6N303R2(4).pdf
Lead Free Status / RoHS Status:
RoHS non-compliant
Stock Condition:
New original, Stock Available.
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number NTMSD6N303R2
Manufacturer / Brand onsemi
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 6A 8SOIC
Lead Free Status / RoHS Status: RoHS non-compliant
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC
Series FETKY™
Rds On (Max) @ Id, Vgs 32mOhm @ 6A, 10V
Power Dissipation (Max) 2W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
FET Type N-Channel
FET Feature Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Base Product Number NTMSD6

Packaging

We offer the highest quality, most economicallypriced static shield packaging available. With 40% light transparency, itallows for easy identification of IC's (integrated circuits) and PCB's (printedcircuit boards). The extremely durable buried metal contruction gives FaradayCage performance needed to effectively shield these componenets against staticcharge.

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



NTMSD6N303R2 Product Details:

NTMSD6N303R2: A High-Performance MOSFET for All Your Electronic Needs When it comes to high-performance transistors, nothing quite compares to the NTMSD6N303R2 from ON Semiconductor. This MOSFET N-CH 30V 6A 8SOIC is a sophisticated device that can be used for a variety of electronic devices and applications. In this article, we will focus on the main features, application scenarios, and usage of this product to help you understand its potential. Main Features and Performance Parameters The NTMSD6N303R2 MOSFET is a single-channel device that operates on a maximum of 30V and 6A, making it an ideal choice for high-power applications. Its output voltage, current, and power capabilities ensure a top-notch performance, excellent accuracy, and efficiency. It stands out from other similar products due to its impressive temperature range, which is between -55°C to 150°C, making it suitable for demanding applications. Application Scenarios and Usage This impressive MOSFET can be used in different industries, including automotive, aerospace, communications, and industrial control systems. It can be applied in power management circuits, switching circuits, and other electronic devices that require high power capabilities. Due to its excellent performance parameters, it is also ideal for use in battery-powered devices, such as smartphones and tablets. Different Types of Integrated Circuits Integrated circuits come in different types, including digital, analog, mixed-signal, and radio frequency (RF). The NTMSD6N303R2 MOSFET is an analog device mainly used in high-power management circuits. Its excellent power capabilities make it suitable for heavy industrial applications as well. Complex Manufacturing Process The manufacturing process of the NTMSD6N303R2 involves numerous steps, starting with chip design, cutting, cleaning, laser processing, back grinding, doping, exposure, and finally, vapor deposition and etching. The complexity of this process ensures that the MOSFET is up to the high-quality standards expected of it. Packaging and Testing After production, MOSFETs like the NTMSD6N303R2 undergo appropriate packaging and testing. This is to ensure that the product quality is up to the high standards required of it. You can rest assured that ON Semiconductor is committed to delivering high-quality MOSFETs that adhere to strict quality guidelines. Conclusion In conclusion, the NTMSD6N303R2 MOSFET is an exceptional device that boasts impressive capabilities, making it suitable for a wide range of industries and applications. Its sophisticated design and manufacturing process are geared towards excellence, which makes it the ideal choice when quality matters most. Whether you are looking for power management circuitry, switching circuits or other electronic devices that require high power capabilities, this MOSFET is an ideal choice that you can trust.

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