Choose your country or region.

EnglishFrançaispolskiSlovenija한국의DeutschSvenskaSlovenskáMagyarországItaliaहिंदीрусскийTiếng ViệtSuomiespañolKongeriketPortuguêsภาษาไทยБългарски езикromânescČeštinaGaeilgeעִבְרִיתالعربيةPilipinoDanskMelayuIndonesiaHrvatskaفارسیNederland繁体中文Türk diliΕλλάδαRepublika e ShqipërisëአማርኛAzərbaycanEesti VabariikEuskeraБеларусьíslenskaBosnaAfrikaansIsiXhosaisiZuluCambodiaსაქართველოҚазақшаAyitiHausaКыргыз тилиGalegoCatalàCorsaKurdîLatviešuພາສາລາວlietuviųLëtzebuergeschmalaɡasʲМакедонскиMaoriМонголулсবাংলা ভাষারမြန်မာनेपालीپښتوChicheŵaCрпскиSesothoසිංහලKiswahiliТоҷикӣاردوУкраїна
IXYS
IXTX210P10T ImageView larger image
Image may be representation.
See specs for product details.

IXTX210P10T

In Stock 340 pcs Reference Price(In US Dollars)
1+
$24.14
10+
$22.26
100+
$19.01
Manufacturer Part Number:
IXTX210P10T
Manufacturer / Brand
IXYS
Part of Description:
MOSFET P-CH 100V 210A PLUS247-3
Datasheets:
IXTX210P10T.pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 340 pcs Stock Available.
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

Inquiry Online

Please complete all required fields with your contact information.Click "SUBMIT REQUEST" we will contact you shortly by email. Or Email us: info@semiconductors-ic.com
Part Number
Manufacturer
Require Quantity
Target Price(USD)
Company Name
Contact Name
E-mail
Phone
Message
Please enter Verify Code and click "Submit"
Part Number IXTX210P10T
Manufacturer / Brand IXYS
Stock Quantity 340 pcs Stock
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 100V 210A PLUS247-3
Lead Free Status / RoHS Status: ROHS3 Compliant
Vgs(th) (Max) @ Id 4.5V @ 250µA
Vgs (Max) ±15V
Technology MOSFET (Metal Oxide)
Supplier Device Package PLUS247™-3
Series TrenchP™
Rds On (Max) @ Id, Vgs 7.5mOhm @ 105A, 10V
Power Dissipation (Max) 1040W (Tc)
Package / Case TO-247-3 Variant
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 69500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 740 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 210A (Tc)
Base Product Number IXTX210

Packaging

We offer the highest quality, most economicallypriced static shield packaging available. With 40% light transparency, itallows for easy identification of IC's (integrated circuits) and PCB's (printedcircuit boards). The extremely durable buried metal contruction gives FaradayCage performance needed to effectively shield these componenets against staticcharge.

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



IXTX210P10T Product Details:

"IXTX210P10T: A High-Performance P-MOSFET Transistor with TrenchP™ Technology for Optimal Power Efficiency" Are you tired of using bulky and low-performance transistors? Are you looking for a transistor that can withstand high voltage, current, and power requirements? Look no further than the IXTX210P10T transistor: a versatile and reliable solution for various electronic applications. Featuring a model number of IXTX210P10T, this discrete semiconductor product belongs to the Transistors - FETs, MOSFETs - Single classification. With its advanced TrenchP™ technology, it can operate as a unipolar P-MOSFET transistor with an impressive maximum voltage of -100V, a current of -210A, and a power of 1040W. The IXTX210P10T transistor boasts outstanding performance parameters that include high accuracy, efficiency, and temperature range. It has an output voltage of -5V, an output current of -210A, a power dissipation of 1040W, an on-resistance of 3.5mOhm and a gate charge of 350nC. Its thermal resistance ranges from 0.32 to 0.44°C/W. This high-performance transistor is a game-changer across diverse industries and electronic devices such as automotive, power, industrial, and medical applications. Whether you need it for a motor driver, power supply, circuits for solar power generation, and other high-current applications, the IXTX210P10T transistor will meet your demands. The manufacturing process of this transistor is intricate, starting from chip design and cutting to cleaning, laser processing, back grinding, doping, exposure, vapor deposition, and etching. It is a product of over 25 years of experience in SiC semiconductor technology and refinement. Moreover, finished products are subject to rigorous testing and packaging to ensure optimal quality. To sum it up, the IXTX210P10T transistor is an excellent device that guarantees optimal power efficiency, performance, and reliability. Its TrenchP™ technology is a real game-changer that allows for the highest performance at the lowest cost. Whether you need to power motors or drive power supplies, this transistor is a sure bet. Don't hesitate to get the IXTX210P10T transistor today and experience cutting-edge sophistication in transistor technology.

You May Also Be Interested In: