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onsemi
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FQB2N80TM

Manufacturer Part Number:
FQB2N80TM
Manufacturer / Brand
onsemi
Part of Description:
MOSFET N-CH 800V 2.4A D2PAK
Datasheets:
FQB2N80TM(1).pdfFQB2N80TM(2).pdfFQB2N80TM(3).pdf
Lead Free Status / RoHS Status:
Stock Condition:
New original, Stock Available.
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number FQB2N80TM
Manufacturer / Brand onsemi
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V 2.4A D2PAK
Lead Free Status / RoHS Status: RoHS Compliant
Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263)
Series QFET®
Rds On (Max) @ Id, Vgs 6.3Ohm @ 900mA, 10V
Power Dissipation (Max) 3.13W (Ta), 85W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc)
Base Product Number FQB2

Packaging

We offer the highest quality, most economicallypriced static shield packaging available. With 40% light transparency, itallows for easy identification of IC's (integrated circuits) and PCB's (printedcircuit boards). The extremely durable buried metal contruction gives FaradayCage performance needed to effectively shield these componenets against staticcharge.

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



FQB2N80TM Product Details:

Title: FQB2N80TM - A High-Performance MOSFET for Power Electronics Applications Introduction: MOSFETs are crucial components in a wide range of electronic devices, powering everything from cell phones and laptops to electric vehicles and renewable energy systems. The FQB2N80TM is a leading-edge MOSFET that offers exceptional performance and reliability in a variety of power electronics applications. 1. FQB2N80TM - A MOSFET with Great Features for High-Performance Applications The FQB2N80TM is a single MOSFET that excels in a range of applications, including power electronics, telecom, and lighting. It boasts a maximum voltage rating of 800V, a continuous drain current of 2.5A, and a power rating of 40W. These features make it an optimal choice for high-performance applications. 2. Unmatched Features and Performance Parameters This MOSFET offers unmatched features and performance parameters, including high accuracy, efficiency, and temperature range (-55 to +175°C). The FQB2N80TM can handle high power applications with ease and is an ideal choice where high switching speeds and high frequency are required. 3. Application Scenarios and Usage The FQB2N80TM is a versatile MOSFET and can be used in various electronic devices, industries, and specific applications. It is commonly utilized in power supplies, inverters, battery chargers, motor controllers, and power management systems. 4. Types of Integrated Circuits Different types of integrated circuits such as digital, analog, mixed signal, and RF are used for various applications. The FQB2N80TM is a single MOSFET designed for power electronics applications. 5. Complex Manufacturing Process The manufacturing process of MOSFETs is a complex one that involves multiple steps. It starts with the design and production of the silicon wafer, followed by the cutting, cleaning, laser processing, back grinding, doping, exposure, vapor deposition, etching, and more. 6. Appropriate Packaging and Testing Once the MOSFETs are fabricated, they need to undergo appropriate packaging and testing to ensure the quality of the component. The FQB2N80TM meets the standards and requirements for automotive grade AEC-Q101 qualification. Conclusion As a high-performance MOSFET, the FQB2N80TM offers exceptional features and performance parameters for power electronics applications. It is widely used in various electronic devices and industries, delivering optimal functionality and reliability. Through its complex manufacturing process and testing standards, it has earned its reputation as a premium-grade MOSFET.

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